參數(shù)資料
型號: DA28F016SA-120
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述: 1M X 16 FLASH 12V PROM, 120 ns, PDSO56
封裝: 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56
文件頁數(shù): 54/63頁
文件大?。?/td> 635K
代理商: DA28F016SA-120
28F016SV FlashFile MEMORY
E
54
5.10 AC Characteristics for WE#
—Controlled Page Buffer Write Operations
(1)
V
CC
= 3.3V ± 0.3V, T
A
= 0°C to +70°C, –40°C to +85°C
Temp
Commercial/Extended
Sym
Parameter
Speed
–75, –100, –120
Unit
Notes
Min
Typ
Max
t
AVWL
Address Setup to WE# Going Low
2
0
ns
V
CC
= 5V
± 0.5V, 5V ± 0.25V, T
A
= 0°C to +70°C, –40°C to +85°C
Temp
Commercial
Comm/Ext
Speed
–65
–70
–80
Sym
Parameter
V
CC
5V ± 5%
5V ± 10%
5V ± 10%
Unit
Load
30 pF
50 pF
50 pF
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
t
AVWL
Address Setup to
WE# Going Low
2
0
0
0
ns
NOTES:
1. All other specifications for WE#
—Controlled Write Operations can be found in section 5.8.
2. Address must be valid during the entire WE# low pulse.
3. Device speeds are defined as:
65/70 ns at V
CC
= 5V equivalent to
75 ns at V
CC
= 3.3V
70/80 ns at V
CC
= 5V equivalent to
120 ns at V
CC
= 3.3V
4. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
5. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
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