參數(shù)資料
型號: DA28F016SA-120
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述: 1M X 16 FLASH 12V PROM, 120 ns, PDSO56
封裝: 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56
文件頁數(shù): 29/63頁
文件大?。?/td> 635K
代理商: DA28F016SA-120
E
5.3 DC Characteristics
V
CC
= 3.3V ± 10%V, T
A
= 0°C to +70°C, –40°C to +70°C
3/5# = Pin Set High for 3.3V Operations
28F016SV FlashFile MEMORY
29
Temp
Commercial
Extended
Sym
I
LI
Parameter
Input Load
Current
Notes
1
Min
Typ
Max
±
1
Min
Typ
Max
±
1
Units
μA
Test Conditions
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
OUT
= V
CC
or GND
I
LO
Output
Leakage
Current
V
CC
Standby
Current
1
±
10
±
10
μA
I
CCS
1,5
70
130
70
130
μA
V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# =
V
CC
±
0.2V
BYTE#, WP#, 3/5#
= V
CC
±
0.2V or
GND ± 0.2V
V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# =
V
IH
BYTE#, WP#, 3/5#
= V
IH
or V
IL
RP# = GND
±
0.2V
BYTE# = V
CC
±
0.2V or GND ±
0.2V
V
CC
= V
CC
Max
CMOS: CE
0
#, CE
1
#
= GND ± 0.2V,
BYTE# = GND ±
0.2V or V
CC
±
0.2V, Inputs =
GND ± 0.2V or
V
CC
± 0.2V
TTL: CE
0
#, CE
1
# =
V
IL
, BYTE# = V
IL
or V
IH,
Inputs =
V
IL
or V
IH
f = 8 MHz, I
OUT
=
0 mA
1
4
1
4
mA
I
CCD
V
CC
Deep
Power-Down
Current
1
2
10
5
15
μA
I
CCR
1
V
CC
Read
Current
1,4,5
40
50
40
55
mA
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