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參數(shù)資料
| 型號(hào)： | CYU01M16SCG |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 16-Mbit (1M x 16) Pseudo Static RAM |
| 中文描述： | 16兆位（1米× 16）偽靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 502K |
| 代理商： | CYU01M16SCG |
PRELIMINARY
CYU01M16SCG
MoBL3
Document #: 001-09739 Rev. **
Page 2 of 11
Power-up Characteristics
The initialization sequence is shown in the figure below. Chip
Select should be CE
1
HIGH or CE
2
LOW for at least 200
μ
s
after V
CC
has reached a stable value. No access must be
attempted during this period of 200
μ
s.
Pin Configuration
[2, 3]
48-Ball VFBGA
Top View
WE
A
11
A
10
A
6
A
0
A
3
CE
1
I/O
10
I/O
8
I/O
9
A
4
A
5
I/O
11
I/O
13
I/O
12
I/O
14
I/O
15
V
SS
A
9
A
8
OE
V
SS
A
7
I/O
0
BHE
CE
2
A
17
A
2
A
1
BLE
V
CC
I/O
2
I/O
1
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
A
15
A
14
A
13
A
12
3
2
6
5
4
1
D
E
B
A
C
F
G
H
A
16
NC
V
CC
A
18
NC
A
19
Product Portfolio
[4]
Product
V
CC
Range (V)
Typ.
[4]
3.0
Speed
(ns)
Power Dissipation
Operating I
CC
(mA)
f = 1MHz
Typ.
[4]
Max.
3
5
Standby I
SB2
(
μ
A)
Typ.
[4]
55
f = f
max
CYU01M16SCG
Min.
2.2
Max.
3.6
Typ.
[4]
18
Max.
25
Max.
70
70
Parameter
Tpu
Description
Min.
200
Typ.
Max.
Unit
μ
s
Chip Enable Low After Stable V
CC
Notes:
2. Ball H6 and E3 can be used to upgrade to a 32-Mbit and a 64-Mbit density, respectively.
3. NC “no connect” - not connected internally to the die.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
(typ) and T
A
= 25°C. Tested initially
and after design changes that may affect the parameters.
Tpu
CE
V
CC
First Access
Stable Power
[+] Feedback
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| CYU01M16SCG-70BVXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:16-Mbit (1M x 16) Pseudo Static RAM |
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| CYU01M16SFEU-70BVXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:16-Mbit (1M x 16) Pseudo Static RAM |
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