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February 25, 2005
Document No. 38-12022 Rev. *G
15
CY8C21x23 Final Data Sheet
3. Electrical Specifications
3.1
Absolute Maximum Ratings
3.2
Operating Temperature
3.3
DC Electrical Characteristics
3.3.1
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
≤
T
A
≤
85
°
C, 3.0V to 3.6V and -40
°
C
≤
T
A
≤
85
°
C, or 2.4V to 3.0V and -40
°
C
≤
T
A
≤
85
°
C, respectively. Typical parameters
apply to 5V, 3.3V, or 2.7V at 25
°
C and are for design guidance only.
Table 3-2. Absolute Maximum Ratings
Symbol
T
STG
Description
Min
Typ
Max
Units
Notes
Storage Temperature
-55
–
+100
o
C
Higher storage temperatures will reduce data
retention time.
T
A
Vdd
V
IO
V
IOZ
I
MIO
ESD
LU
Ambient Temperature with Power Applied
-40
–
+85
o
C
V
Supply Voltage on Vdd Relative to Vss
DC Input Voltage
-0.5
Vss - 0.5
–
–
+6.0
Vdd + 0.5 V
DC Voltage Applied to Tri-state
Vss - 0.5
–
Vdd + 0.5 V
Maximum Current into any Port Pin
-25
–
+50
mA
Electro Static Discharge Voltage
Latch-up Current
2000
–
–
–
–
200
V
mA
Human Body Model ESD.
Table 3-3. Operating Temperature
Symbol
T
A
T
J
Description
Min
Typ
Max
Units
Notes
Ambient Temperature
-40
–
+85
o
C
Junction Temperature
-40
–
+100
o
C
The temperature rise from ambient to junction is
package specific. See
“Thermal Impedances”
on page 31
. The user must limit the power con-
sumption to comply with this requirement.
Table 3-4. DC Chip-Level Specifications
Symbol
Vdd
Description
Min
Typ
Max
Units
Notes
Supply Voltage
2.40
–
5.25
V
See DC POR and LVD specifications,
Table 3-11
on page 19
.
Conditions are Vdd = 5.0V, 25
o
C, CPU = 3 MHz,
SYSCLK doubler disabled. VC1 = 1.5 MHz, VC2
= 93.75 kHz, VC3 = 0.366 kHz.
Conditions are Vdd = 3.3V, 25
o
C, CPU = 3 MHz,
clock doubler disabled. VC1 = 375 kHz, VC2 =
23.4 kHz, VC3 = 0.091 kHz.
Conditions are Vdd = 2.55V, 25
o
C, CPU = 3
MHz, clock doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz.
Vdd = 2.55V, 0
o
C to 40
o
C.
I
DD
Supply Current, IMO = 24 MHz
–
3
4
mA
I
DD3
Supply Current, IMO = 6 MHz
–
1.2
2
mA
I
DD27
Supply Current, IMO = 6 MHz
–
1.1
1.5
mA
I
SB27
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and internal slow oscillator active. Mid temperature range.
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and internal slow oscillator active.
Reference Voltage (Bandgap)
–
2.6
4
μ
A
I
SB
–
2.8
5
μ
A
Vdd = 3.3V, -40
o
C
≤
T
A
≤
85
o
C.
V
REF
1.28
1.30
1.32
V
Trimmed for appropriate Vdd. Vdd = 3.0V to
5.25V.
Trimmed for appropriate Vdd. Vdd = 2.4V to
3.0V.
V
REF27
Reference Voltage (Bandgap)
1.16
1.30
1.330
V
AGND
Analog Ground
V
REF
- 0.003
V
REF
V
REF
+ 0.003
V