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參數(shù)資料
| 型號： | CY7C439 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | Bidirectional 2K x 9 FIFO( 2K x 9雙向 先進先出) |
| 中文描述： | 雙向2K × 9的FIFO（2K × 9雙向先進先出） |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 282K |
| 代理商： | CY7C439 |
CY7C439
5
t
WFF
t
BDA
t
BDB
t
BA
t
BHZ[8, 9]
t
TSB
t
TBS
t
TSN
t
TSD[8, 9]
t
TBN
t
TBD
t
TPD[8, 9]
t
DL
t
ESD
[
8, 9]
t
EBD[8, 9]
t
EDS
t
EDB
t
BPW
t
TSP
t
BLZ[8, 9]
t
BDV
t
WHF
t
RHF
t
RAE
t
RPE
t
WAF
t
WPF
t
BSU
t
BHL
Notes:
7.
STBX LOW to E/F LOW (Write)
BYPX HIGH to BDA LOW (Write)
25
25
30
30
35
35
60
60
ns
ns
BYPX HIGH to BDA HIGH (Read)
25
30
35
60
ns
BYPX LOW to Data Valid (Read)
BYPX HIGH to High Z (Read)
30
18
30
20
40
25
60
30
ns
ns
STBX HIGH to BYPX LOW Set-Up
10
10
10
15
ns
STBX LOW after BYPX LOW
STBX HIGH Recovery Time
0
10
0
10
10
0
10
0
15
10
ns
ns
10
10
STBX HIGH to Data High Z
18
20
25
30
ns
BYPX HIGH Recovery Time
BYPX HIGH to Data High Z
10
10
10
15
ns
ns
18
20
25
30
STBX LOW to Data Valid
20
20
30
55
ns
Transparent Propagation Delay
STBX LOW to High Z
20
18
20
20
25
25
30
30
ns
ns
BYPX LOW to High Z
18
20
25
30
ns
STBX HIGH to Low Z
BYPX HIGH to Low Z
18
18
20
20
25
25
30
30
ns
ns
BYPX Pulse Width (Trans.)
25
30
40
65
ns
STBX Pulse Width (Trans.)
BYPX LOW to Low Z (Read)
20
10
20
10
30
10
55
10
ns
ns
BYPX HIGH to Data Invalid (Read)
3
3
3
3
ns
STBX LOW to HF LOW (Write)
STBX HIGH to HF HIGH (Read)
35
35
40
40
50
50
80
80
ns
ns
Effective Read from Write HIGH
25
30
35
60
ns
Effective Read Pulse Width after E/F HIGH
Effective Write from Read HIGH
25
30
40
65
ns
ns
25
30
35
60
Effective Write Pulse Width after E/F HIGH
25
30
40
65
ns
Bypass Data Set-Up Time
Bypass Data Hold Time
15
0
18
0
20
0
30
10
ns
ns
Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, and output loading of the specified I
OL
/I
OH
and 30-pF load capacitance
as in part (a) of AC Test Loads, unless otherwise specified.
t
DVR
, t
BDV
, t
HZR
, t
TBD
, t
BHZ
, t
, t
ESD
, t
, t
, t
, and t
use capacitance loading as in part (b) of AC Test Loads.
t
, t
TBD
, t
, t
, t
, and t
TSD
transition is measured at +500 mV from V
OL
and - 500 mV from V
OH
DVR
and t
BDV
transition is measured at the 1.5V level. t
LZR
, t
HWZ
,
and t
BLZ
transition is measured at
±
100 mV from the steady state.
8.
9.
Switching Characteristics
Over the Operating Range
[2, 7]
(Continued)
7C439-25
Min.
7C439-30
Min.
7C439-40
Min.
7C439-65
Min.
Parameter
Description
Max.
Max.
Max.
Max.
Unit
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