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參數(shù)資料
| 型號： | CY7C1992BV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 18-Mbit DDR-II SIO SRAM 2-Word(2字Burst結構,18-Mbit DDR-II SIO SRAM) |
| 中文描述： | 18兆位的DDR - II二氧化硅的SRAM 2字（2字突發(fā)結構,18 -兆位的DDR - II二氧化硅的SRAM） |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 1031K |
| 代理商： | CY7C1992BV18 |
18-Mbit DDR-II SIO SRAM
2-Word
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Cypress Semiconductor Corporation
Document Number: 38-05623 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 12, 2005
Features
18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
300-MHz clock for high bandwidth
2-Word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
Synchronous internally self-timed writes
1.8V core power supply with HSTL inputs and outputs
Variable drive HSTL output buffers
Expanded HSTL output voltage (1.4V - V
DD
)
Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
Offered in lead-free and non lead-free packages
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configuration
CY7C1392BV18 – 2M x 8
CY7C1992BV18 – 2M x 9
CY7C1393BV18 – 1M x18
CY7C1394BV18 – 512K x 36
Functional Description
The CY7C1392BV18, CY7C1992BV18, CY7C1393BV18, and
CY7C1394BV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II SIO (Double Data Rate Separate I/O)
architecture. The DDR-II SIO consists of two separate ports to
access the memory array. The Read port has dedicated Data
outputs and the Write port has dedicated Data inputs to
completely eliminate the need to “turn around’ the data bus
required with common I/O devices. Access to each port is
accomplished using a common address bus. Addresses for
Read and Write are latched on alternate rising edges of the
input (K) clock. Write data is registered on the rising edges of
both K and K. Read data is driven on the rising edges of C and
C if provided, or on the rising edge of K and K if C/C are not
provided. Each address location is associated with two 8-bit
words in the case of CY7C1392BV18, two 9-bit words in the
case of CY7C1992BV18, two 18-bit words in the case of
CY7C1393BV18, and two 36-bit words in the case of
CY7C1394BV18, that burst sequentially into or out of the
device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to
the two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR-II SIO
SRAM in the system design. Output data clocks (C/C) enable
maximum system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K/K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
300 MHz
300
600
278 MHz
278
580
250 MHz
250
550
200 MHz
200
500
167 MHz
167
450
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
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