參數(shù)資料
型號(hào): CY7C199
廠商: Cypress Semiconductor Corp.
英文描述: 32K x 8 Static RAM(32K x 8靜態(tài) RAM)
中文描述: 32K的× 8靜態(tài)RAM(32K的× 8靜態(tài)RAM)的
文件頁(yè)數(shù): 1/13頁(yè)
文件大?。?/td> 239K
代理商: CY7C199
32K x 8 Static RAM
fax id: 1030
CY7C199
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
February 1988 – Revised April 22, 1998
Features
High speed
—10 ns
Fast t
DOE
CMOS for optimum speed/power
Low active power
—467 mW (max, 12 ns “L” version)
Low standby power
—0.275 mW (max, “L” version)
2V data retention (“L” version only)
Easy memory expansion with CE and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Functional Description
The CY7C199 is a high-performance CMOS static RAM orga-
nized as 32,768 words by 8 bits. Easy memory expansion is
Logic Block Diagram
provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and three-state drivers. This device has an
automatic power-down feature, reducing the power consump-
tion by 81% when deselected. The CY7C199 is in the standard
300-mil-wide DIP, SOJ, and LCC packages.
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O
7
) is written into the memory location addressed by
the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Pin Configurations
DIP / SOJ / SOIC
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
WE
A
4
A
3
A
2
A
1
OE
A
0
V
CC
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
5
CE
1024 x 32 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
A
1
28
4
5
6
7
8
9
10
11
12
3 2 1
27
1314151617
26
25
24
23
22
21
20
19
18
A
VC
I
G
W
A
A
I
I
I
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
CE
I/O
7
I/O
6
A
3
A
2
A
1
OE
A
0
I/O
1
A
4
Top View
LCC
C199–1
C199–2
C199–3
22
23
24
25
26
27
28
1
2
3
4
5
6
10
11
15
14
13
12
16
19
18
17
20
21
7
8
9
OE
A
1
A
2
A
3
A
4
WE
V
CC
5
A
6
A
7
A
8
A
9
A
10
A
11
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
C199–4
TSOP I
Top View
(not to scale)
Selection Guide
7C199-8
8
120
7C199-10
10
110
90
0.5
0.05
7C199-12
12
160
90
10
0.05
7C199-15
15
155
90
10
0.05
7C199-20
20
150
90
10
0.05
7C199-25
25
150
80
10
0.05
7C199-35
35
140
70
10
0.05
7C199-45
45
140
Maximum Access Time (ns)
Maximum Operating
Current (mA)
L
Maximum CMOS
Standby Current (mA)
0.5
10
L
Shaded area contains preliminary information.
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