參數(shù)資料
型號(hào): CY7C1394BV18-200BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述: 512K X 36 DDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 22/27頁
文件大?。?/td> 446K
代理商: CY7C1394BV18-200BZXC
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document Number: 38-05623 Rev. *C
Page 22 of 27
t
CQOH
t
CHCQX
Echo Clock Hold after C/C
Clock Rise
Echo Clock High to Data
Change
Echo Clock High to Data
Change
Clock (C/C) Rise to High-Z
(Active to High-Z)
[26, 27]
Clock (C/C) Rise to
Low-Z
[26, 27]
–0.45
–0.45
–0.45
–0.45
–0.50
ns
t
CQD
t
CQHQV
0.27
0.27
0.30
0.35
0.40
ns
t
CQDOH
t
CQHQX
–0.27
–0.27
–0.30
–0.35
–0.40
ns
t
CHZ
t
CHQZ
0.45
0.45
0.45
0.45
0.50
ns
t
CLZ
t
CHQX1
–0.45
–0.45
–0.45
–0.45
–0.50
ns
DLL Timing
t
KC Var
t
KC lock
t
KC Reset
t
KC Var
t
KC lock
t
KC Reset
Clock Phase Jitter
DLL Lock Time (K, C)
K Static to DLL Reset
0.20
0.20
0.20
0.20
0.20
ns
1024
30
1024
30
1024
30
1024
30
1024
30
Cycles
ns
Notes:
26.t
, t
, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured
±
100 mV from steady-state voltage.
27.At any given voltage and temperature t
CHZ
is less than t
CLZ
and t
CHZ
less than t
CO
.
Switching Characteristics
Over the Operating Range
[22,23]
(continued)
Cypress
Parameter
Consortium
Parameter
Description
300 MHz
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
278 MHz
250 MHz
200 MHz
167 MHz
Unit
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相關(guān)PDF資料
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CY7C1394BV18-200BZXI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-250BZC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
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CY7C1394BV18-250BZXC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
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