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參數(shù)資料
| 型號： | CY7C1386D-167BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| 中文描述： | 512K X 36 CACHE SRAM, 3.4 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 6/30頁 |
| 文件大?。?/td> | 974K |
| 代理商： | CY7C1386D-167BZC |
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CY7C1386D, CY7C1386F
CY7C1387D, CY7C1387F
Document Number: 38-05545 Rev. *E
Page 6 of 30
Pin Definitions
Name
IO
Description
A
0
, A
1
, A
Input-
Synchronous
Address inputs used to select one of the address locations
. Sampled at the
rising edge of the CLK if ADSP or ADSC is active LOW, and CE
1
,
CE
2
, and
CE
3 [2]
are sampled active. A1: A0 are fed to the two-bit counter.
BW
A
, BW
B
BW
C
, BW
D
GW
Input-
Synchronous
Byte write select inputs, active LOW
. Qualified with BWE to conduct byte writes
to the SRAM. Sampled on the rising edge of CLK.
Input-
Synchronous
Global write enable input, active LOW
. When asserted LOW on the rising edge
of CLK, a global write is conducted (all bytes are written, regardless of the values
on BW
X
and BWE).
Byte write enable input, active LOW
. Sampled on the rising edge of CLK. This
signal must be asserted LOW to conduct a byte write.
BWE
Input-
Synchronous
CLK
Input-
Clock
Clock input
. Used to capture all synchronous inputs to the device. Also used to
increment the burst counter when ADV is asserted LOW, during a burst operation.
CE
1
Input-
Synchronous
Chip enable 1 input, active LOW
. Sampled on the rising edge of CLK. Used in
conjunction with CE
2
and CE
3 [2]
to select or deselect the device. ADSP is ignored
if CE
1
is HIGH. CE
1
is sampled only when a new external address is loaded.
Chip enable 2 input, active HIGH
. Sampled on the rising edge of CLK. Used in
conjunction with CE
1
and CE
3[2]
to select or deselect the device. CE
2
is sampled
only when a new external address is loaded.
CE
2 [2]
Input-
Synchronous
CE
3 [2]
Input-
Synchronous
Chip enable 3 input, active LOW
. Sampled on the rising edge of CLK. Used in
conjunction with CE
1
and
CE
2
to select or deselect the device. Not connected for
BGA. Where referenced, CE
3 [2]
is assumed active throughout this document for
BGA. CE
3
is sampled only when a new external address is loaded.
Output enable, asynchronous input, active LOW
. Controls the direction of the
IO pins. When LOW, the IO pins behave as outputs. When deasserted HIGH, DQ
pins are tri-stated, and act as input data pins. OE is masked during the first clock of
a read cycle when emerging from a deselected state.
OE
Input-
Asynchronous
ADV
Input-
Synchronous
Advance input signal, sampled on the rising edge of CLK, active LOW
. When
asserted, it automatically increments the address in a burst cycle.
ADSP
Input-
Synchronous
Address strobe from processor, sampled on the rising edge of CLK, active
LOW
. When asserted LOW, addresses presented to the device are captured in the
address registers. A1: A0 are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE
1
is
deasserted HIGH.
ADSC
Input-
Synchronous
Address strobe from controller, sampled on the rising edge of CLK, active
LOW
. When asserted LOW, addresses presented to the device are captured in the
address registers. A1: A0 are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized.
ZZ
Input-
Asynchronous
ZZ sleep input, active HIGH
. When asserted HIGH places the device in a non-time
critical sleep condition with data integrity preserved. For normal operation, this pin
has to be LOW. ZZ pin has an internal pull down.
DQs, DQP
X
IO-
Synchronous
Bidirectional data IO lines
. As inputs, they feed into an on-chip data register that
is triggered by the rising edge of CLK. As outputs, they deliver the data contained
in the memory location specified by the addresses presented during the previous
clock rise of the read cycle. The direction of the pins is controlled by OE. When OE
is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP
X
are
placed in a tri-state condition.
V
DD
Power Supply
Power supply inputs to the core of the device
.
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1386D-167BZI | Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics. |
| CY7C1386D-167BZXC | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1386D-167BZXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1386D-200AXC | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1386D-200AXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1386D-200AXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx36 3.3V COM 2CD Sync PL 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1386D-200AXCT | 功能描述:靜態(tài)隨機存取存儲器 512Kx36 3.3V COM 2CD Sync PL 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1386D-200BGCT | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 3NS 119BGA - Tape and Reel |
| CY7C1386D-250AXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1386S-167AXC | 功能描述:靜態(tài)隨機存取存儲器 CY7C1386S-167AXC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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