參數(shù)資料
型號: CY7C1386D-167BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
中文描述: 512K X 36 CACHE SRAM, 3.4 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁數(shù): 30/30頁
文件大小: 974K
代理商: CY7C1386D-167BZC
CY7C1386D, CY7C1386F
CY7C1387D, CY7C1387F
Document Number: 38-05545 Rev. *E
Page 30 of 30
Document History Page
Document Title: CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F, 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync
SRAM
Document Number: 38-05545
Orig. of
Change
**
254550
See ECN
RKF
New data sheet
*A
288531
See ECN
SYT
Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for
non-compliance with 1149.1
Removed 225Mhz Speed Bin
Added Pb-free information for 100-pin TQFP, 119 BGA and 165 FBGA
Packages.
Added comment of ‘Pb-free BG packages availability’ below the Ordering
Information
*B
326078
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added description on EXTEST Output Bus Tri-State
Changed description on the Tap Instruction Set Overview and Extest
Changed Device Width (23:18) for 119-BGA from 000110 to 101110
Added separate row for 165 -FBGA Device Width (23:18)
Changed
Θ
JA
and
Θ
JC
for TQFP Package
from 31 and 6
°
C/W to 28.66 and
4.08
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for BGA Package
from 45 and 7
°
C/W to 23.8 and 6.2
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for FBGA Package
from 46 and 3
°
C/W to 20.7 and
4.0
°
C/W respectively
Modified V
OL,
V
OH
test conditions
Removed comment of ‘Pb-free BG packages availability’ below the Ordering
Information
Updated Ordering Information Table
*C
418125
See ECN
NXR
Converted from Preliminary to Final.
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed the description of I
X
from Input Load Current to Input Leakage
Current on page# 18.
Changed the I
X
current values of MODE on page # 18 from –5
μ
A and 30
μ
A
to –30
μ
A and 5
μ
A.
Changed the I
X
current values of ZZ on page # 18 from –30
μ
A and 5
μ
A
to –5
μ
A and 30
μ
A.
Changed V
IH
< V
DD
to V
IH
< V
DD
on page # 18.
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table.
*D
475009
See ECN
VKN
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP
AC Switching Characteristics table.
Updated the Ordering Information table.
*E
793579
See ECN
VKN
Added Part numbers CY7C1386F and CY7C1387F
Added footnote# 3 regarding Chip Enable
Updated Ordering Information table
REV.
ECN NO.
Issue Date
Description of Change
[+] Feedback
相關PDF資料
PDF描述
CY7C1386D-167BZI Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
CY7C1386D-167BZXC 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1386D-167BZXI 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1386D-200AXC 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
CY7C1386D-200AXI 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
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