參數(shù)資料
型號: CY7C0837AV
廠商: Cypress Semiconductor Corp.
英文描述: FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM(FLEx18 3.3V 64K/128K x 36和128K/256K x 18同步雙端口RAM)
中文描述: FLEx18 3.3 64K/128K × 36和128K/256K × 18同步雙口RAM(FLEx18 3.3 64K/128K × 36和128K/256K × 18同步雙端口RAM)的
文件頁數(shù): 17/28頁
文件大?。?/td> 775K
代理商: CY7C0837AV
CY7C0837AV
CY7C0830AV/CY7C0831AV
CY7C0832AV/CY7C0833AV
Document #: 38-06059 Rev. *Q
Page 17 of 28
Bank Select Read
[33, 34]
Read-to-Write-to-Read (OE = LOW)
[32, 35, 36, 37, 38]
Notes:
33.In this depth-expansion example, B1 represents Bank #1 and B2 is Bank #2; each bank consists of one Cypress FLEx18 device from this data sheet. ADDRESS
(B1)
= ADDRESS
(B2)
.
34. ADS = CNTEN= BE0 – BE1 = OE = LOW; MRST = CNTRST = CNT/MSK = HIGH.
35.Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
36.During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
37. CE
0
= OE = BE0 – BE1 = LOW; CE
1
= R/W = CNTRST = MRST = HIGH.
38.CE
= BE0 – BE1 = R/W = LOW; CE
= CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, since OE = LOW, the Write operation cannot be
completed (labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.
Switching Waveforms
(continued)
Q
3
Q
1
Q
0
Q
2
A
0
A
1
A
2
A
3
A
4
A
5
Q
4
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
t
SC
t
HC
t
SA
t
HA
t
SC
t
HC
t
SC
t
HC
t
SC
t
HC
t
CKHZ
t
DC
t
DC
t
CD2
t
CKLZ
t
CD2
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
CH2
t
CL2
t
CYC2
CLK
ADDRESS
(B1)
CE
(B1)
DATA
OUT(B2)
DATA
OUT(B1)
ADDRESS
(B2)
CE
(B2)
t
CYC2
t
CL2
t
CH2
t
HC
t
SC
t
HW
t
SW
t
HA
t
SA
t
HW
t
SW
t
CD2
t
CKHZ
t
SD
t
HD
t
CKLZ
READ
t
CD2
NO OPERATION
WRITE
READ
CLK
CE
R/W
ADDRESS
DATA
IN
DATA
OUT
A
n
A
n+1
A
n+2
A
n+2
D
n+2
A
n+3
A
n+4
Q
n
Q
n+3
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