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參數(shù)資料
| 型號(hào)： | CY62148EV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mbit (512K x 8) Static RAM |
| 中文描述： | 4兆位（為512k × 8）靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 919K |
| 代理商： | CY62148EV30 |
CY62148EV30 MoBL
Document #: 38-05576 Rev. *F
Page 4 of 12
Capacitance
(For All packages)
[10]
Parameter
C
IN
C
OUT
Description
Test Conditions
Max
10
10
Unit
pF
pF
Input Capacitance
Output Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Thermal Resistance
[10]
Parameter
Description
Test Conditions
VFBGA
Package
72
TSOP II
Package
75.13
SOIC
Package
55
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
°
C/W
Θ
JC
8.86
8.95
22
°
C/W
AC Test Loads and Waveforms
Parameters
R1
R2
R
TH
V
TH
2.50V
16667
15385
8000
1.20
3.0V
1103
1554
645
1.75
Unit
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min
Typ
[4]
Max
Unit
V
DR
I
CCDR [9]
V
CC
for Data Retention
Data Retention Current
1.5
V
V
CC
= 1.5V, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
0.8
7
μ
A
t
CDR [10]
t
R [11]
Chip Deselect to Data Retention Time
0
ns
Operation Recovery Time
t
RC
ns
Data Retention Waveform
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalentto:
THEVENIN
EQUIVALENT
R
TH
ALL INPUT PULSES
R1
V
CC(min)
t
R
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
V
CC
CE
Notes
10.Tested initially and after any design or process changes that may affect these parameters.
11. Full device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μ
s or stable at V
CC(min)
> 100
μ
s.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62148EV30_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) Static RAM |
| CY62148EV30_12 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512 K ?? 8) Static RAM |
| CY62148EV30LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) Static RAM |
| CY62148EV30LL-45BVI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra Lo PWR HI SPD MicroPWR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62148EV30LL-45BVIT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra Lo PWR HI SPD MicroPWR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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