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參數(shù)資料
| 型號(hào)： | CY62147EV18LL-55BVXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 388K |
| 代理商： | CY62147EV18LL-55BVXI |
CY62147EV18 MoBL2
Document #: 38-05441 Rev. *F
Page 4 of 12
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
VFBGA
Package
75
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
°
C/W
Θ
JC
10
°
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
Parameters
R1
R2
R
TH
V
TH
1.80V
13500
10800
6000
0.80
Unit
V
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Conditions
Min
Typ
[1]
Max
Unit
V
DR
I
CCDR[7]
V
CC
for Data Retention
Data Retention Current
1.0
V
μ
A
V
CC
= 1.0V, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
0.5
5
t
CDR[8]
t
R[9]
Chip Deselect to Data Retention Time
0
ns
Operation Recovery Time
t
RC
ns
Data Retention Waveform
Figure 3. Data Retention Waveform
[10]
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
ALL INPUT PULSES
R
TH
R1
Equivalent to: THEVENIN EQUIVALENT
V
CC(min)
t
R
V
CC(min)
t
CDR
V
DR
> 1.0V
DATA RETENTION MODE
V
CC
CE
or
BHE
.BLE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μ
s or stable at V
CC(min)
> 100
μ
s.
10.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62147EV18LL-55BVXIT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra Lo PWR HI SPD MicroPWR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62147EV30 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM |
| CY62147EV30_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM |
| CY62147EV30_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM Wide voltage range: 2.20 V to 3.60 V |
| CY62147EV30_12 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256Kx16) Satic RAM |
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