參數資料
型號: CY62146E
廠商: Cypress Semiconductor Corp.
英文描述: 4-Mbit (256K x 16) Static RAM
中文描述: 4兆位(256K × 16)靜態(tài)RAM
文件頁數: 7/11頁
文件大?。?/td> 449K
代理商: CY62146E
CY62146E MoBL
Document #: 001-07970 Rev. *C
Page 7 of 11
Write Cycle No. 1
(WE Controlled)
[15, 19, 20]
Figure 5. Write Cycle No. 1
Write Cycle No. 2
(CE
Controlled)
[15, 19, 20]
Figure 6. Write Cycle No. 2
Switching Waveforms
(continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
t
HZOE
DATA
IN
NOTE 21
t
BW
t
SCE
DATA IO
ADDRESS
CE
WE
OE
BHE/BLE
t
HD
t
SD
t
PWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
t
BW
t
SA
CE
ADDRESS
WE
DATA IO
OE
BHE/BLE
NOTE 21
Notes
19.Data IO is high impedance if OE = V
.
20.If CE goes HIGH simultaneously with WE = V
, the output remains in a high impedance state.
21.During this period, the IOs are in output state. Do not apply input signals.
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