參數(shù)資料
型號(hào)： CY62137FV18
廠商： Cypress Semiconductor Corp.
英文描述： 2-Mbit (128K x 16) Static RAM(2Mbit (128K x 16)靜態(tài)RAM)
中文描述： 2兆位（128K的× 16）靜態(tài)隨機(jī)存儲(chǔ)器（2Mbit的（128K的× 16），靜態(tài)內(nèi)存）
文件頁數(shù)： 3/11頁
文件大?。?/td> 449K
代理商： CY62137FV18
CY62137FV18 MoBL
Document #: 001-08030 Rev. *E
Page 3 of 11
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential .....................................................–0.2V to + 2.45V
DC Voltage Applied to Outputs
in High Z State
[4, 5]
.........................................–0.2V to 2.45V
DC Input Voltage
[4, 5]
.....................................–0.2V to 2.45V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current ....................................................> 200 mA
Operating Range
Device
Range
Ambient
Temperature
–40°C to +85°C 1.65V to 2.25V
V
CC
[6]
CY62137FV18
Industrial
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
55 ns
Unit
Min
Typ
[1]
Max
V
OH
Output HIGH Voltage
I
OH
= –0.1 mA
1.4
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
0.2
V
V
IH
Input HIGH Voltage
V
CC
=1.65V to 2.25V
1.4
V
CC
+ 0.2V
V
V
IL
Input LOW Voltage
V
CC
=1.65V to 2.25V
–0.2
0.4
V
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
μ
A
I
OZ
Output Leakage Current
GND < V
O
< V
CC
, output disabled
–1
+1
μ
A
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC(max)
= 2.25V
I
OUT
= 0 mA
CMOS levels
13
18
mA
f = 1 MHz
V
CC(max)
= 2.25V
1.6
2.5
mA
I
SB1
Automatic CE Power Down
Current–CMOS
Inputs
CE > V
CC
0.2V,
V
IN
>V
CC
– 0.2V, V
IN
< 0.2V)
f = f
max
(address and data only), f
= 0 (OE, WE, BHE and BLE)
V
CC(max)
= 2.25V
1
5
μ
A
I
SB2 [7]
Automatic CE Power Down
Current–CMOS
Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V, f = 0
V
CC(max)
= 2.25V
1
5
μ
A
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
C
IN
C
OUT
Description
Test Conditions
Max
10
10
Unit
pF
pF
Input Capacitance
Output Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
=V
+0.5V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
μ
s ramp time from 0 to V
(min) and 200
μ
s wait time after V
stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) must be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62137FV18_09 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM
CY62137FV18_10 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM
CY62137FV18_11 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128 K x 16) Static RAM Automatic power down when deselected
CY62137FV18LL 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM
CY62137FV18LL-55BVXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 3.0V SUPER LO PWR 128KX16 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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