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參數(shù)資料
| 型號： | CY62137FV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (128K x 16) Static RAM(2Mbit (128K x 16)靜態(tài)RAM) |
| 中文描述： | 2兆位（128K的× 16）靜態(tài)隨機存儲器（2Mbit的（128K的× 16），靜態(tài)內存） |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 449K |
| 代理商： | CY62137FV18 |
CY62137FV18 MoBL
Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-08030 Rev. *E
Revised August 01, 2007
Page 11 of 11
MoBL is a registered trademark, and More Battery Life is a trademark of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective
holders
Document History Page
Document Title: CY62137FV18 MoBL
2-Mbit (128K x 16) Static RAM
Document Number: 001-08030
Issue
Date
Change
**
463660
See ECN
NXR
*A
469180
See ECN
NSI
*B
569125
See ECN
NXR
REV.
ECN NO.
Orig. of
Description of Change
New datasheet
Minor change: moved to external web
Converted from preliminary to final
Replaced 45 ns speed bin with 55 ns speed bin
Changed the I
CC(max)
value from 2.25 mA to 2.5 mA for test condition f=1 MHz
Changed the I
SB2(typ)
value from 0.5
μ
A to 1
μ
A
Changed the I
SB2(max)
value from 2.5
μ
A to 5
μ
A
Changed the I
CCDR(typ)
value from 0.5
μ
A to 1
μ
A and I
CCDR(max)
value from 2.5
μ
A to
4
μ
A
Added footnote #12 related to t
ACE
Added footnote #8 related to I
SB2
and I
CCDR
Made footnote #13 applicable to AC parameters from t
ACE
Changed t
WC
specification from 45 ns to 55 ns
Changed t
SCE
, t
AW
, t
PWE
, t
BW
specification from 35 ns to 40 ns
Changed t
HZWE
specification from 18 ns to 20 ns
VKN/AESA Changed t
WC
specification from 55 ns to 45 ns
Changed t
SCE
, t
AW
, t
PWE
, t
BW
specification from 40 ns to 35 ns
Changed t
HZWE
specification from 20 ns to 18 ns
*C
*D
869500
908120
See ECN
See ECN
VKN
VKN
*E
1274728
See ECN
相關PDF資料 |
PDF描述 |
|---|---|
| CY62137FV30 | 2-Mbit (128K x 16) Static RAM(2Mbit (128K x 16)靜態(tài)RAM) |
| CY62137V MoBL | 128K x 16 Static RAM(128K x 16 靜態(tài)RAM) |
| CY62137V18 | 128K x 16 Static RAM(128K x 16靜態(tài)RAM) |
| CY62137V | 2-Mbit (128K x 16) Static RAM |
| CY62137VLL-55ZI | 2-Mbit (128K x 16) Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY62137FV18_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137FV18_10 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137FV18_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128 K x 16) Static RAM Automatic power down when deselected |
| CY62137FV18LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137FV18LL-55BVXI | 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 128KX16 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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