參數(shù)資料
型號(hào): CXK77910ATM
廠商: Sony Corporation
英文描述: 131,072-Word by 9-Bit High-Speed Synchronous Static RAM(131072字 × 9位高速同步靜態(tài)RAM)
中文描述: 131,072由9位字高速同步靜態(tài)存儲(chǔ)器(131072字× 9位高速同步靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 6/11頁(yè)
文件大小: 187K
代理商: CXK77910ATM
–6–
CXK77910ATM/AYM
5.5
4.5
Read Cycle (WE = "H")
Read cycle time
Clock high pulse width
Clock low pulse width
Clock to data valid
Address setup to clock high
Address hold from clock high
Chip enable setup to clock high
Chip enable hold from clock high
Output enable setup to clock high
Output enable hold from clock high
Clock high to output low-Z
Clock high to output high-Z
t
CKHCKH
t
CKHCKL
t
CKLCKH
t
CKHQV
t
AVCKH
t
CKHAX
t
CEVCKH
t
CKHCEX
t
OEVCKH
t
CKHOEX
t
CKHQX
*
t
CKHQZ
*
10
3.5
3.5
2.5
0.5
2.5
0.5
2.5
0.5
1.5
ns
*Transition is measured ±200mV from steady voltage with specfified loading in Fig. 1-(2). This parameter is sampled and is not 100% tested.
Write Cycle
Write cycle time
Clock high pulse width
Clock low pulse width
Address setup to clock high
Address hold from clock high
Chip enable setup to clock high
Chip enable hold from clock high
Write enable setup to clock high
Write enable hold from clock high
Input data setup to clock high
Input data hold from clock high
t
CKHCKH
t
CKHCKL
t
CKLCKH
t
AVCKH
t
CKHAX
t
CEVCKH
t
CKHCEX
t
WEVCKH
t
CKHWEX
t
DVCKH
t
CKHDX
Item
Symbol
-10
-12
Unit
Min.
Max.
Min.
Max.
6.5
5
12.5
4
4
2.5
0.5
2.5
0.5
2.5
0.5
1.5
10
3.5
3.5
2.5
0.5
2.5
0.5
2.5
0.5
2.5
0.5
ns
Item
Symbol
-10
-12
Unit
Min.
Max.
Min.
Max.
12.5
4
4
2.5
0.5
2.5
0.5
2.5
0.5
2.5
0.5
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