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參數(shù)資料
| 型號： | CXK5V8512TM-85LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 154K |
| 代理商： | CXK5V8512TM-85LLX |
– 3 –
CXK5V8512TM
Input leakage current
Output leakage current
Operating power supply
current
I
LI
I
LO
I
CC1
V
IN
= GND to V
CC
CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= GND to V
CC
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
I
OUT
= 0mA
Min. cycle
duty = 100%
I
OUT
= 0mA
Cycle time 1μs
duty = 100%
I
OUT
= 0mA
CE1
≤
0.2V
CE2
≥
Vcc – 0.2V
V
IL
≤
0.2V
V
IH
≥
Vcc – 0.2V
85LLX
10LLX
–25 to +85°C
–25 to +70°C
+25°C
–1
–1
—
—
—
—
5
10
—
—
—
—
—
—
0.24
0.12
14
7
—
1.4
μA
mA
—
—
1
30
25
+1
+1
3
40
35
μA
μA
mA
mA
mA
Item
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Electrical Characteristics
DC Characteristics
(V
CC
= 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C)
V
CC
= 3.3V, Ta = 25°C
Average operating current
Output high voltage
Output low voltage
Standby current
I
CC2
I
CC3
I
SB1
I
SB2
V
OH
V
OL
CE1 = V
IH
or CE2 = V
IL
I
OL
= 2.0mA
2.4
—
—
—
—
0.4
V
V
I
OH
= –2.0mA
CE2
≤
0.2V
CE1
≥
Vcc – 0.2V
or
{
CE2
≥
Vcc – 0.2V
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