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參數(shù)資料
| 型號(hào)： | CXK5V8512TM-85LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 8位高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 154K |
| 代理商： | CXK5V8512TM-85LLX |
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CXK5V8512TM
-85LLX/10LLX
65536-word
×
8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
E95716-PP
Description
The CXK5V8512TM is a high speed CMOS static
RAM organized as 65536-words by 8-bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Operating on a single 3.3V supply, and special
feature are low power consumption, high speed.
The CXK5V8512TM is a suitable RAM for portable
equipment with battery back up.
Features
Extended operating temperature range:
–25 to +85°C
Fast access time:
(Access time)
85ns (Max.)
100ns (Max.)
14μA (Max.)
-85LLX
-10LLX
Low standby current:
Low data retention current: 12μA (Max.)
Single 3.3V supply:
Low voltage data retention: 2.0V
Package
8mm
×
20mm 32 pin TSOP package
3.3V ± 0.3V
(Min.)
Function
65536-word
×
8-bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
32 pin TSOP (Plastic)
V
CC
GND
CE1
CE2
Row
Decoder
Buffer
Buffer
I/O Buffer
A15
A13
A8
A11
A9
A7
A6
A5
A14
A12
A4
A3
A10
A0
A2
A1
OE
WE
Buffer
I/O Gate
Column
Decoder
Memory
Matrix
1024
×
512
I/O1
I/O8
Block Diagram
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