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參數(shù)資料
| 型號(hào)： | CNA1311K |
| 廠商： | PANASONIC CORP |
| 元件分類： | 開(kāi)關(guān) |
| 英文描述： | Photo Interrupter |
| 中文描述： | 1 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | 2.60 X 4 MM, 3.30 MM HEIGHT, ULTRA MINIATURE, PLASTIC, PISSR104-001, 4 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | CNA1311K |
1
Transmissive Photosensors (Photo Interrupters)
CNA1311K
Photo Interrupter
For contactless SW, object detection
Overview
CNA1311K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting diode
chip and a high sensitivity Si phototransistor chip are integrated in a
double molded resin package.
*1
Input power derating ratio is
1.0mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.0mW/C at Ta
≥
25C.
*3
Soldering time is within 5 seconds.
(1.8)
1
3
2
4
4.0
1.0
1.5
1.5
*3.0
2
3
5
+0.2
2-0.4
2-0.2
(
A'
A
(1.5)
A side
With gate
B side
(
2.6
*2.0
N
1
(
SEC. A-A'
Slit(0.15)
2-0.5
Optical
center
(C0.5)
1
3
2
4
Unit : mm
3: Collecter
4: Emitter
1: Anode
2: Cathode
Pin connection
(Note)
1. Tolerance unless otherwise specified is
±
0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
more than 1mm
Soldering bath
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
–40 to +100
T
sol*3
Unit
V
mA
mW
mA
V
V
mW
C
C
C
Input (Light
emitting diode)
6
50
75
20
35
6
75
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Temperature
Storage temperature
Soldering temperature
260
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C
Conditions
min
typ
1.2
max
1.4
10
100
600
0.4
Unit
V
μ
A
nA
μ
A
V
μ
s
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 20V
V
CE
= 5V, I
F
= 5mA
Output characteristics
Collector cutoff current
Collector current
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 10mA, I
C
= 40
μ
A
Response time
Transfer
characteristics
50
t
r
, t
f*
V
CC
= 5V, I
C
= 0.1mA, R
L
= 1000
50
*
Switching time measurement circuit
Features
Ultraminiature : 2.6
×
4.0 mm (height : 3.3 mm)
Highly precise position detection : 0.05 mm
Gap width : 1.0 mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CNA1311K0TLC | 功能描述:INTERRUPTER PHOTO 1MM SLOT PCB RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光斷續(xù)器 - 槽型 - 晶體管輸出 系列:- 產(chǎn)品變化通告:Internal Chip Change 04/May/2007 標(biāo)準(zhǔn)包裝:100 系列:- 檢測(cè)距離:0.063"（1.6mm） 檢測(cè)方法:可傳導(dǎo)的 輸出配置:光電晶體管 電流 - DC 正向(If):50mA 電流 - 集電極 (Ic)（最大）:20mA 電壓 - 集電極發(fā)射極擊穿（最大）:35V 響應(yīng)時(shí)間:35µs，35µs 安裝類型:通孔 封裝/外殼:PCB 安裝 包裝:管件 類型:無(wú)放大 工作溫度:-25°C ~ 85°C 其它名稱:425-1978-5 |
| CNA1312K | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Transmissive Photosensors(Photo Interrupters) |
| CNA1312K0TLC | 功能描述:INTERRUPTER PHOTO 2MM SLOT PCB RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光斷續(xù)器 - 槽型 - 晶體管輸出 系列:- 產(chǎn)品變化通告:Internal Chip Change 04/May/2007 標(biāo)準(zhǔn)包裝:100 系列:- 檢測(cè)距離:0.063"（1.6mm） 檢測(cè)方法:可傳導(dǎo)的 輸出配置:光電晶體管 電流 - DC 正向(If):50mA 電流 - 集電極 (Ic)（最大）:20mA 電壓 - 集電極發(fā)射極擊穿（最大）:35V 響應(yīng)時(shí)間:35µs，35µs 安裝類型:通孔 封裝/外殼:PCB 安裝 包裝:管件 類型:無(wú)放大 工作溫度:-25°C ~ 85°C 其它名稱:425-1978-5 |
| CNA1801N | 制造商:Panasonic Industrial Company 功能描述:SENSOR |
| CN-A24 | 制造商:TDK 制造商全稱:TDK Electronics 功能描述:50 & 100W 14.4 to 36VDC Input DC-DC Converters |
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