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參數(shù)資料
| 型號(hào)： | CNB1002 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 光電傳感器 |
| 英文描述： | Reflective Photosensors |
| 中文描述： | POSITION, LINEAR SENSOR-DIFFUSE, 1mm, 0.02-0.16mA, RECTANGULAR, SURFACE MOUNT |
| 封裝： | 2.70 X 3.40 MM, 1.50 MM HEIGHT, ULTRAMINIATURE, PLASTIC, PRSMG104-001, 4 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | CNB1002 |
1
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C*1
I
D
Conditions
min
typ
1.2
max
1.4
10
100
160
100
0.4
Unit
V
μ
A
nA
μ
A
nA
V
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 20V
V
CC
= 2V, I
F
= 4mA. R
L
= 100
, d
= 1mm
V
CC
= 2V, I
F
= 4mA, R
L
= 100
Output characteristics
Collector cutoff current
Collector current
Leakage current
23
Transfer
characteristics
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 20mA, I
C
= 0.1mA
Response time
t
r*2
t
f*2
V
CC
= 5V, I
C
= 0.1mA,
R
L
= 1000
30
40
μ
s
*1
Output Current (IC) measurement
*2
Response time measurement
method (see figure below.) circuit (see figure below.)
Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective Photosensors
Input and output are handled electrically.
This product is not designed to withstand radiation.
Chip
center
C0.5
3.4
1.8
1
3
2
4
4-0.5
4
±
0
2
0
0.05
+0.1
0.15
1.5
0.85
4-0.7
Unit : mm
1: Emitter 3: Anode
2: Collector 4: Cathode
1: Anode 3: Emitter
2: Cathode 4: Collector
Pin connection
CNB1001
1
4
3
2
Pin connection
CNB1002
3
2
1
4
(Note) Tolerance unless otherwise specified is
±
0.2
V
CC
R
L
I
F
I
C
d = 1mm
Evaporated Al
Glass plate
R
L
50
V
CC
d = 1mm
Evaporated Al
Glass plate
Sig.IN
Sig.
OUT
10%
90%
t
r
t
f
t
r
: Rise time
t
f
: Fall time
Sig.OUT
Sig.IN
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
– 40 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
6
50
75
20
35
6
75
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Features
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7
×
3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Overview
CNB1001 and CNB1002 are a small, thin SMD-compatible
reflective photosensor consisting of a high efficiency GaAs infrared
light emitting diode which is integrated with a high sensitivity Si
phototransistor in a single resin package.
Color indication of classifications
Class
I
C
(
μ
A)
Color
Q
23 to 50
Orange
R
41 to 90
White
S
74 to 160
Light blue
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.0 mW/C at Ta
≥
25C.
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| CNB10020RL | 功能描述:SENSOR OPTO TRANS 1MM REFL SMD RoHS:是 類(lèi)別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 反射式 - 模擬輸出 系列:- 產(chǎn)品變化通告:Product Discontinuation 03/Dec/2009 標(biāo)準(zhǔn)包裝:50 系列:- 檢測(cè)距離:0.157" (4mm) 檢測(cè)方法:反射 電壓 - 集電極發(fā)射極擊穿（最大）:30V 電流 - 集電極 (Ic)（最大）:- 電流 - DC 正向(If):50mA 輸出類(lèi)型:光電晶體管 響應(yīng)時(shí)間:10µs，50µs 安裝類(lèi)型:通孔 封裝/外殼:PCB 安裝 包裝:散裝 工作溫度:-40°C ~ 85°C |
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| CNB1009(ON2173) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:光デバイス － フォトカプラ?フォトセンサ － 反射形フォトセンサ |
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