參數(shù)資料
型號： CNB1009
廠商： PANASONIC CORP
元件分類： 光電傳感器
英文描述： Reflective Photosensor
中文描述： POSITION, LINEAR SENSOR-DIFFUSE, 5-5mm, 0.10-0.50mA, RECTANGULAR, THROUGH HOLE MOUNT
封裝： ROHS COMPLIANT, 4 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 49K
代理商： CNB1009
1
Reflective Photosensors (Photo Reflectors)
CNB1009
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response : t
r
, t
f
= 6
μ
s (typ.)
Small size, light weight
2-2.3
2.2
2-9.5
±
0.2
19.0
±
0.3
(4.0)
(1.0)
1.0
(15.5)
4
±
0
6
±
0
2
3
1
4
Unit : mm
Pin connection
12.0
±
0.3
T
L
1
7
±
0
9
±
0
2
(
1.0
1
4
3
2
(Note) ( ) Dimension is reference
R
L
I
F
I
C
V
CC
d = 5 mm
Standard white paper (Reflective ratio 90%)
10%
90%
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
Symbol
Ratings
V
R
I
F
P
D*1
V
CEO
V
ECO
I
C
P
C*2
T
opr
–25 to +85
T
stg
–30 to +100
Unit
V
mA
mW
V
V
mA
mW
C
C
Input (Light
emitting diode)
3
50
75
20
5
30
100
Output (Photo
Emitter to collector voltage
transistor)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C*1
t
r*2
, t
f*3
V
CC
= 10V, I
C
= 1mA, R
L
= 100
Conditions
min
typ
1.2
max
1.5
10
Unit
V
μ
A
pF
μ
A
pF
μ
A
μ
s
V
Input
characteristics
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f
= 1MHz
V
CE
= 10V
V
CE
= 10V, f= 1MHz
V
CC
= 10V, I
F
= 20mA, R
L
= 100
50
Output characteristics
Collector cutoff current
Collector to emitter capacitance
Collector current
characteristics
Response time
0.2
5
Transfer
100
500
6
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.3
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
*2
Time required for the collector current to increase from
10% to 90% of its final value.
*3
Time required for the collector
current to decrease from 90%
to 10% of its initial value.
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Detection of position and edge
Start, end mark detection of magnetic tape
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.34 mW/C at Ta
≥
25C.
相關(guān)PDF資料
PDF描述
CNB1011P Reflective photosensor
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CNB1302 Reflective Photosensor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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CNB1011P 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Reflective photosensor
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