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參數(shù)資料
| 型號： | CNB1304H |
| 廠商： | Panasonic Corporation |
| 英文描述： | Reflective photosensor Tape end sensor for DAT |
| 中文描述： | 反射光傳感器膠帶逸年底傳感器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 75K |
| 代理商： | CNB1304H |
Reflective Photosensors (Photo Reflectors)
CNB1304H
(ON2175)
Reflective photosensor
1
Publication date: April 2004
SHG00049BED
Tape end sensor for DAT
■
Overview
CNB1304H is a sensor which consists of a high efficiency GaAs
infrared light emitting diode and a high sensitivity Si phototransistor
which are arranged together in the same direction. It detects the
beginning and end of a tape based on changes in the amount of light
reflected from a prism which is situated outside of the sensor.
■
Features
Fast response
Small size and light weight
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Reverse voltage
Symbol
V
R
I
F
P
D
V
CEO
Rating
3
Unit
V
Input (Light
emitting diode) Forward current
Power dissipation
*1
50
mA
75
mW
Output (Photo Collector-emitter voltage
transistor)
(Base open)
30
V
Emitter-collector voltage
(Base open)
V
ECO
5
V
Collector current
Collector power dissipation
*2
I
C
P
C
T
opr
T
stg
20
mA
100
mW
°
C
°
C
Temperature
Operating ambient temperature
20 to
+
85
30 to
+
100
Storage temperature
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input
Forward voltage
V
F
I
R
I
CEO
I
F
=
50 mA
V
R
=
3 V
V
CE
=
10 V
1.5
V
μ
A
nA
characteristics
Reverse current
Collector-emitter cutoff current
characteristics
(Base open)
Collector current
*1
10.0
Output
200
Transfer
I
C
V
CE
=
5 V, I
F
=
20 mA
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
0.5 mA, R
L
=
100
100
1 500
μ
A
V
μ
s
characteristics
Collector-emitter saturation voltage
V
CE(sat)
Rise time
0.5
t
r
t
f
6
Fall time
6
(Note) ( ) Dimension is reference
CNB1304H
prism
2.5
1
1
2
(Unit: mm)
(Input pulse)
(Output pulse)
t
r
: Rise time
t
f
: Fall time
Sig. out
R
L
10%
90%
t
r
t
f
50
V
CC
Sig. in
3.75
±0.15
8
±
6
±
φ
2.2
±0.3
2-
φ
1.2
±0.15
(R2.3)
5
+
-
0
6
±
7
±
5
4
±
1
±
(
3
±
8.0
7.0
±0.3
+0
-
0.3
+
0
0.3
4.0
±0.3
2-
φ
1.2
±0.15
(3.75)
(3.75)
2-0.4
±0.2
φ
1.2
+0.2
-
0.1
2-0.15
4
2
3
1
(4-R0.3)
(C0.3)
1: Anode
2: Cathode
3: Collector
4: Emitter
PRSTR104-005 Package
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*1: Input power derating ratio is
1.0 mW/
°
C at T
a
≥
25
°
C.
*2: Output power derating ratio is
1.33 mW/
°
C at T
a
≥
25
°
C.
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3.*1: I
C
measurement circuit
*2: Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
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