參數(shù)資料
型號： BX80538T1400
廠商： INTEL CORP
元件分類： 微控制器/微處理器
英文描述： 1830 MHz, MICROPROCESSOR, CPGA478
封裝： MICRO, FCPGA-478
文件頁數(shù)： 85/91頁
文件大?。?/td> 2017K
代理商： BX80538T1400
Thermal Specifications and Design Considerations
86
Datasheet
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
Intel does not support or recommend operation of the thermal diode when the processor
power supplies are not within their specified tolerance range.
2.
Characterized across a temperature range of 50 - 100°C.
3.
Not 100% tested. Specified by design characterization.
4.
The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by
the diode equation:
IFW = IS * (e
qV
D
/nkT –1)
where IS = saturation current, q = electronic charge, VD = voltage across the diode, k =
Boltzmann Constant, and T = absolute temperature (Kelvin).
5.
The series resistance, RT, is provided to allow for a more accurate measurement of the
junction temperature. RT, as defined, includes the lands of the processor but does not
include any socket resistance or board trace resistance between the socket and the
external remote diode thermal sensor. RT can be used by remote diode thermal sensors
with automatic series resistance cancellation to calibrate out this error term. Another
application is that a temperature offset can be manually calculated and programmed into
an offset register in the remote diode thermal sensors as exemplified by the equation:
Terror = [RT * (N-1) * IFWmin] / [nk/q * ln N]
where Terror = sensor temperature error, N = sensor current ratio, k = Boltzmann
Constant, q = electronic charge.
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
2.
Same as IFW in Table 25.
3.
Characterized across a temperature range of 50 - 100°C.
4.
Not 100% tested. Specified by design characterization.
5.
The ideality factor, nQ, represents the deviation from ideal transistor model behavior as
exemplified by the equation for the collector current:
IC = IS * (e
qV
BE
/n
Q
kT –1)
Where IS = saturation current, q = electronic charge, VBE = voltage across the transistor
base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute
temperature (Kelvin).
6.
The series resistance, RT, provided in the Diode Model Table (Table 26) can be used for
more accurate readings as needed.
Table 26.
Thermal Diode Parameters using Diode Mode
Symbol
Parameter
Min
Typ
Max
Unit
Notes
IFW
Forward Bias Current
5
-
200
A
1
n
Diode Ideality Factor
1.000
1.009
1.050
-
2, 3, 4
R
T
Series Resistance
2.79
4.52
6.24
Ω
2, 3, 5
Table 27.
Thermal Diode Parameters using Transistor Mode
Symbol
Parameter
Min
Typ
Max
Unit
Notes
IFW
Forward Bias Current
5
-
200
A
1, 2
IE
Emitter Current
5
200
A
nQ
Transistor Ideality
0.997
1.001
1.005
-
3, 4, 5
Beta
0.3
0.760
3, 4
R
T
Series Resistance
2.79
4.52
6.24
Ω
3, 6
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