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參數(shù)資料
| 型號： | BUK582-100A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 55K |
| 代理商： | BUK582-100A |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK582-100A
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
amb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
amb
); conditions: V
GS
≥
5 V
Fig.3. Transient thermal impedance.
Z
th j-amb
= f(t); parameter D = t
p
/T
Fig.4. Safe operating area T
= 25 C
I
D
&
I
DM
=
f(V
DS
); I
DM
single pulse; parameter t
p
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
Tamb / C
0.1
1
10
100
VDS / V
ID / A
10
1
0.1
0.01
BUK582-100A
100 us
1 ms
10 ms
100 ms
1 s
RDSON =VDSID
10 s
DC
tp = 10 us
0
20
40
60
80
100
120
140
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
Tamb / C
0
2
4
6
8
10
VDS / V
ID / A
BUK582-100A
7
6
5
4
3
2
1
0
2
3
3.5
4
5
10
VGS/ V = 2.5
1E-07
1E-05
1E-03
1E-01
1E+01
1E+03
BUKX82-100
t / s
Zth j-amb / (K/W)
D =
1E+02
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
0
2
4
6
ID / A
RDS(ON)/ Ohm
BUK582-100A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.5
3
3.5
4
5
10
VGS/ V =
January 1998
3
Rev 1.100
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|---|---|
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| BUK582-60A | 制造商:NXP Semiconductors 功能描述: |
| BUK583-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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