參數(shù)資料
型號(hào)： BUK582-100A
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-223, 4 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 55K
代理商： BUK582-100A
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK582-100A
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
100
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 100 V; V
GS
= 0 V;
V
DS
= 100 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
15 V; V
= 0 V
V
GS
= 5 V; I
D
= 1.7 A
1.0
-
-
-
-
1.5
1
0.1
10
0.23
2.0
10
1.0
100
0.31
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
CONDITIONS
V
DS
= 25 V; I
D
= 1.7 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
2
-
-
-
-
-
-
-
TYP.
3
400
90
35
12
45
50
30
MAX.
-
600
120
50
18
70
70
45
UNIT
S
pF
pF
pF
ns
ns
ns
ns
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 5 V; R
GS
= 50
;
R
gen
= 50
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
1.7
UNIT
A
-
I
F
= 1.7 A; V
GS
= 0 V
I
F
= 1.7 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
6.8
1.1
-
-
A
V
ns
μ
C
0.85
90
0.30
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 1.7 A; V
DD
≤
25 V;
V
GS
= 5 V; R
GS
= 50
;
T
amb
= 25 C
MIN.
-
TYP.
-
MAX.
45
UNIT
mJ
January 1998
2
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK582-60A PowerMOS transistor Logic level FET
BUK583-60A PowerMOS transistor Logic level FET
BUK627-400A N-Channel Enhancement MOSFET
BUK627-400B N-Channel Enhancement MOSFET
BUK627-450B N-Channel Enhancement MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK582-100AT/R 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.7A I(D) | SOT-223
BUK582-60A 制造商:NXP Semiconductors 功能描述:
BUK583-60A 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
BUK6207-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V81ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,81A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,81A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6207-30C,118 功能描述:MOSFET N-CHAN 30V 81A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*