參數(shù)資料
型號(hào)： BUK583-60A
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 3.2 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 55K
代理商： BUK583-60A
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK583-60A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mount
applications.
The device is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
60
3.2
1.8
150
0.10
V
A
W
C
V
GS
= 5 V
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
T
amb
= 25 C
T
amb
= 100 C
T
amb
= 25 C
T
amb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
15
3.2
2.0
13
1.8
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-amb
PARAMETER
From junction to solder point
1
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of fig.18
MIN.
-
-
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
4
1
2
3
d
g
s
1
Temperature measured at solder joint on drain tab.
September 1995
1
Rev 1.200
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BUK627-400A N-Channel Enhancement MOSFET
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