參數(shù)資料
型號(hào)： BUK583-60A
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 3.2 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 55K
代理商： BUK583-60A
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK583-60A
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
60
TYP.
70
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 60 V; V
GS
= 0 V;
V
DS
= 60 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
15 V; V
= 0 V
V
GS
= 5 V; I
D
= 3.2 A
1.0
-
-
-
-
1.5
1
0.1
10
0.08
2.0
10
1.0
100
0.10
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
CONDITIONS
V
DS
= 25 V; I
D
= 3.2 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
TYP.
6.0
650
240
120
10
35
60
55
MAX.
-
825
350
160
20
55
90
80
UNIT
S
pF
pF
pF
ns
ns
ns
ns
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 5 V; R
GS
= 50
;
R
gen
= 50
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
3.2
UNIT
A
-
I
F
= 3.2 A; V
GS
= 0 V
I
F
= 3.2 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
13
1.1
-
-
A
V
ns
μ
C
0.85
70
0.25
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 3.2 A; V
DD
≤
25 V;
V
GS
= 5 V; R
GS
= 50
; T
amb
= 25 C
MIN.
-
TYP.
-
MAX.
45
UNIT
mJ
September 1995
2
Rev 1.200
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