參數(shù)資料
型號： BUK583-60A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 3.2 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 4/8頁
文件大?。?/td> 55K
代理商： BUK583-60A
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK583-60A
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 3.2 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
10
9
8
7
6
5
4
3
2
1
0
Tj / C = 150
25
1
3
5
ID / A
VGS / V
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
2
1
0
max.
typ.
min.
0
2
4
6
8
10
15
10
5
0
gfs / S
ID / A
0
0.4
0.8
1.2
1.6
2
2.4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
2 %
typ
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK5y3-50
September 1995
4
Rev 1.200
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