參數(shù)資料
型號(hào): BUK582-100A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-223, 4 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 55K
代理商: BUK582-100A
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK582-100A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mount
applications.
The device is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
100
1.7
1.8
150
0.31
V
A
W
C
V
GS
= 5 V
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
T
amb
= 25 C
T
amb
= 100 C
T
amb
= 25 C
T
amb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
15
1.7
1.1
6.8
1.8
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-b
R
th j-amb
PARAMETER
From junction to board
1
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
MIN.
-
-
TYP.
40
-
MAX.
-
70
UNIT
K/W
K/W
4
1
2
3
d
g
s
1
Temperature measured 1-3 mm from tab.
January 1998
1
Rev 1.100
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