- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369565 > BUK456-60H (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號： | BUK456-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | BUK456-60H |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60H
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
60
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 60 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 25 A
2.1
-
-
-
-
3.0
1
0.1
10
17
4.0
10
1.0
100
20
V
μ
A
mA
nA
m
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
17
-
-
-
-
-
-
-
-
TYP.
22
1600
800
310
30
90
190
140
3.5
MAX.
-
2200
1000
450
40
120
250
180
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V;
R
GS
= 50
;
R
gen
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
50
UNIT
A
-
I
F
= 50 A ; V
GS
= 0 V
I
F
= 50 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
200
2.5
250
-
A
V
ns
μ
C
1.8
80
0.4
AVALANCHE LIMITING VALUE
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 50 A ; V
≤
25 V ;
V
GS
= 10 V ; R
GS
= 50
MIN.
-
TYP.
-
MAX.
150
UNIT
mJ
May 1993
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK463-100A | PowerMOS transistor |
| BUK463-60B | PowerMOS transistor |
| BUK463-60A | PowerMOS transistor |
| BUK464-200A | PowerMOS transistor |
| BUK464-60H | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK456-800 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK456-800A | 制造商: 功能描述: 制造商:undefined 功能描述: |
| BUK456-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK456-800B/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 MOSFET N KANAL |
| BUK457-400 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:POWER MOS TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。