參數(shù)資料
型號(hào): BUK456-60H
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 1/7頁
文件大?。?/td> 57K
代理商: BUK456-60H
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
60
60
150
175
20
V
A
W
C
m
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
30
60
46
240
150
175
175
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
1.0
UNIT
K/W
R
th j-a
-
-
60
-
K/W
1 2 3
tab
d
g
s
May 1993
1
Rev 1.100
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