參數(shù)資料
型號(hào): BUK463-60B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 73K
代理商: BUK463-60B
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK463-60A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK463
-60A
60
22
75
175
0.08
-60B
60
20
75
175
0.10
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
A
W
C
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
60
60
30
UNIT
V
V
V
-60A
22
15
88
-60B
20
14
80
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
75
175
175
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
2.0
UNIT
K/W
R
th j-a
minimum footprint,
FR4 board (see Fig. 18).
50
-
K/W
1
3
mb
2
d
g
s
July 1995
1
Rev 1.000
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BUK465-60A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor