參數(shù)資料
型號: BUK463-100A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 1/7頁
文件大小: 76K
代理商: BUK463-100A
Philips Semiconductors
Product specification
PowerMOS transistor
BUK463-100A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a plastic
envelope suitable for surface mount
applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
UNIT
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
100
14
75
175
0.16
V
A
W
C
V
DS
I
D
P
tot
T
j
R
DS(ON)
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
14
10
56
75
175
175
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to minimum footprint
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2
UNIT
K/W
-
50
-
K/W
FR4 board (see fig. 18)
1
3
mb
2
d
g
s
February 1996
1
Rev 1.000
相關PDF資料
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BUK463-60B PowerMOS transistor
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