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參數(shù)資料
| 型號： | BUK111-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Logic level TOPFET SMD version of BUK112-50GL |
| 中文描述： | 12 A, 50 V, 0.093 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BUK111-50GL |
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
OVERLOAD CHARACTERISTICS
T
mb
= 25 C; V
PS
= 5 V unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load protection
Drain current limiting
Overload power threshold
1
Characteristic energy
Peak drain current
3
V
IS
= 5 V
V
DS
= 13 V
for protection to operate
which determines trip time
2
V
DD
= 13 V; R
L
≤
10 m
I
D
P
D(TO)
E
DSC
I
DM
-40C
≤
T
mb
≤
150C
12
-
-
-
24
100
200
45
36
-
-
-
A
W
mJ
A
Overtemperature protection
Threshold temperature
T
j(TO)
I
D
≥
1 A
150
185
215
C
FLAG CHARACTERISTICS
The flag is an open drain transistor which requires an external pull-up circuit.
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Flag ‘low’
V
FSF
Flag voltage
CONDITIONS
normal operation; V
PS
= 5 V
I
F
= 100
μ
A
MIN.
TYP.
MAX.
UNIT
-
-
-
0.7
-
10
-
V
V
-40C
≤
T
mb
≤
150C
0.9
-
I
FSF
Flag saturation current
Flag ‘high’
Flag leakage current
V
FS
= 5 V
overload or fault
V
FS
= 5 V
mA
I
FSO
-
-
6
0.1
1
6.9
3
1
10
-
4
μ
A
μ
A
V
V
T
mb
= 150C
V
(CL)FS
V
PSF
Flag clamping voltage
Protection supply threshold
voltage
4
I
F
= 100
μ
A
I
F
= 100
μ
A; V
DS
= 5 V
2.5
-40C
≤
T
mb
≤
150C
2
-
4
V
Application information
Suitable external pull-up
resistance
R
F
V
FF
= 5 V
-
50
-
k
1
Refer to figure 15.
2
Trip time t
d sc
≈
E
DSC
/ [ P
D
- P
D(TO)
]. Refer also to figure 15.
3
For short circuit load connected after turn-on.
4
When V
PS
is less than V
PSF
the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.
September 1996
5
Rev 1.000
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|---|---|
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK116-50L | Logic level TOPFET SMD version of BUK106-50L/S(BUK106-50L/S版本的邏輯電平TOPFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK112-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK114-50L,118 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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