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參數資料
| 型號： | BUK111-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Logic level TOPFET SMD version of BUK112-50GL |
| 中文描述： | 12 A, 50 V, 0.093 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 2/16頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BUK111-50GL |
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
Continuous voltage
V
DS
Drain source voltage
1
Continuous currents
I
D
Drain current
CONDITIONS
MIN.
MAX.
UNIT
V
IS
= 0 V
-
50
V
V
PS
= 5 V; T
mb
=
25 C
-
self -
limited
12
5
5
5
A
V
PS
= 0 V; T
mb
=
94 C
-
-
-
-
A
I
I
I
F
I
P
Input current
Flag current
Protection supply current
Thermal
Total power dissipation
Storage temperature
Junction temperature
2
Lead temperature
-5
-5
-5
mA
mA
mA
P
tot
T
stg
T
j
T
sold
T
mb
= 25 C
-
continuous
during soldering
-
52
175
150
260
W
C
C
C
-55
-
-
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Electrostatic discharge capacitor
voltages
Human body model;
C = 100 pF; R = 1.5 k
V
C1
V
C2
Drain to source
-
4.5
kV
Input, flag or protection to source
-
2
kV
OVERLOAD PROTECTION LIMITING VALUE
With the protection supply
connected, TOPFET can protect
itself from two types of overload -
short circuit load and
overtemperature.
SYMBOL
PARAMETER
V
PSP
Protection supply voltage
3
For overload conditions an n-MOS
transistor turns on between the
gate and source to quickly
discharge the power MOSFET
gate capacitance.
CONDITIONS
for valid protection
The drain current is limited to
reduce dissipation in case of short
circuit load. Refer to OVERLOAD
CHARACTERISTICS.
MIN.
4.5
MAX.
-
UNIT
V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
E
DSM
Non-repetitive clamping energy
I
DM
= 6 A; T
mb
= 25C
E
DRM
Repetitive clamping energy
I
DM
= 3.1 A; V
≤
20 V;
T
mb
≤
120C; f = 250 Hz
MIN.
-
-
MAX.
200
20
UNIT
mJ
mJ
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
The minimum supply voltage required for correct operation of the overload protection circuits.
September 1996
2
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK116-50L | Logic level TOPFET SMD version of BUK106-50L/S(BUK106-50L/S版本的邏輯電平TOPFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK112-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK114-50L,118 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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