參數(shù)資料
型號: BUK111-50GL
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Logic level TOPFET SMD version of BUK112-50GL
中文描述: 12 A, 50 V, 0.093 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 12/16頁
文件大?。?/td> 93K
代理商: BUK111-50GL
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
Fig.30. Typical clamping characteristics, 25C.
I
D
= f(V
DS
); conditions: V
IS
= 0 V; t
p
50
μ
s
Fig.31. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 6 A
Fig.32. Clamping energy test circuit.
E
DSM
=
0.5
LI
D
Fig.33. Typical off-state characteristics, T
j
= 25C.
I
D
= f(V
DS
); V
IS
= 0 V; parameter V
PS
Fig.34. Typical open circuit load detect currents.
I
DSP
& I
DSF
= f(V
PS
); V
IS
= 0 V; V
DS
5 V; T
j
= 25C
Fig.35. Typical open circuit load detect currents.
I
DSP
& I
DSF
= f(T
j
); V
PS
= 5 V; V
IS
= 0 V
50
55
60
65
70
0
2
4
6
8
10
12
BUK111-50GL
VIS / V
ID / A
0
10
20
30
40
50
60
70
0
1
2
3
4
5
BUK111-50GL
VDS / V
ID / mA
VPS = 0 V
VPS = 5 V
IDSS
IDSP
OPEN CIRCUIT LOAD DETECTION
OVERVOLTAGE CLAMPING
IDSF
0
2
4
6
8
VPS / V
IDSP & IDSF / mA
BUK111-50GL
2
1.5
1
0.5
0
IDSP
IDSF
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
-50
0
50
100
150
200
0
0.5
1
1.5
2
BUK111-50GL
Tmb / C
IDSP & IDSF / mA
IDSP
IDSF
L
D.U.T.
VDD
R 01
shunt
VDS
-ID/100
+
-
VIS
0
ID
0
VDS
0
VDD
V(CL)DSP
D
S
I
TOPFET
P
F
P
RF
VPS
+
2
V
(
CL
)
DSS
/(
V
(
CL
)
DSS
V
DD
)
September 1996
12
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK112-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK113-50DL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK114-50L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET
BUK114-50L /T3 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK114-50L,118 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube