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參數(shù)資料
| 型號： | BUK111-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Logic level TOPFET SMD version of BUK112-50GL |
| 中文描述： | 12 A, 50 V, 0.093 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 93K |
| 代理商： | BUK111-50GL |
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
Fig.18. Typical DC input characteristic.
I
I
= f(V
IS
) normal operation; T
j
= 25C
Fig.19. Typical DC input characteristic, T
j
= 25C.
I
ISL
= f(V
IS
) overload protection latched; V
PS
= 5 V
Fig.20. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.21. Typical protection supply characteristics.
I
P
= f(V
PS
); normal or overload operation; T
j
= 25C
Fig.22. Typical flag high characteristic, T
j
= 25C.
I
F
= f(V
FS
); refer to TRUTH TABLE
Fig.23. Typical flag low characteristic, T
= 25C.
I
F
= f(V
FS
); V
PS
= 5 V; refer to TRUTH TABLE
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
BUK111-50GL
VIS / V
II / mA
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
BUK111-50GL
VPS / V
IP / mA
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
BUK111-50GL
VIS / V
IISL / mA
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
BUK111-50GL
VFS / V
IF / mA
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VIS(TO) / V
2
1
0
max.
typ.
min.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
BUK111-50GL
VFS / F
IF / uA
September 1996
10
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK116-50L | Logic level TOPFET SMD version of BUK106-50L/S(BUK106-50L/S版本的邏輯電平TOPFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK112-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK114-50L,118 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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