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參數(shù)資料
| 型號： | BUK111-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Logic level TOPFET SMD version of BUK112-50GL |
| 中文描述： | 12 A, 50 V, 0.093 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BUK111-50GL |
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance
Junction to mounting base
Junction to ambient
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
R
th j-a
-
minimum footprint FR4 PCB
-
-
-
2.38
-
K/W
K/W
50
OUTPUT CHARACTERISTICS
T
mb
= 25 C; V
PS
= 0 V unless otherwise specified
SYMBOL
PARAMETER
Off-state
V
(CL)DSS
Drain-source clamping voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
D
= 10 mA;
I
DM
= 0.75 A; t
p
≤
300
μ
s;
δ
≤
0.01
V
IS
= 0 V;
-40C
≤
T
mb
≤
150C
50
50
-
-
-
-
70
70
10
20
100
V
V
μ
A
μ
A
μ
A
60
0.5
1
10
I
DSS
Drain-source leakage current
1
V
DS
= 13 V
V
DS
= 50 V
T
mb
= 125 C; V
DS
= 40 V
t
p
≤
300
μ
s;
δ
≤
0.01
I
DM
= 6 A; V
IS
= 4.4 V; V
PS
= 4.5 V
On-state
Drain-source on-resistance
R
DS(ON)
-
-
70
135
93
165
m
m
T
mb
= 150 C
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Normal operation
V
IS(TO)
Input threshold voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 13 V; V
PS
= 0 V; I
D
= 1 mA
-40C
≤
T
mb
≤
150C
V
IS
= 5 V
-40C
≤
T
mb
≤
150C
I
I
= 1.5 mA
to gate of power MOSFET
1
1.5
-
350
7.1
1.5
2
V
V
μ
A
V
k
0.5
200
6
-
2.5
500
-
-
I
IS
V
(CL)IS
R
IG
Input current
Input clamping voltage
Internal series resistance
Overload protection latched
Input current
I
ISL
V
PS
= 5 V; V
IS
= 5 V
1.5
3.2
4
mA
REVERSE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
-V
DS
Reverse drain voltage
2
-V
IS
Reverse input voltage
-V
PS
Reverse protection pin voltage
-V
FS
Reverse flag voltage
CONDITIONS
-I
D
= 6 A
-I
I
= 5 mA
-I
P
= 5 mA
-I
F
= 5 mA
MIN.
-
-
-
-
TYP.
0.8
0.7
0.7
0.7
MAX.
-
-
-
-
UNIT
V
V
V
V
1
The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2
Protection functions are disabled during reverse conduction.
September 1996
3
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK116-50L | Logic level TOPFET SMD version of BUK106-50L/S(BUK106-50L/S版本的邏輯電平TOPFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK112-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK114-50L,118 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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