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參數(shù)資料
| 型號(hào)： | BUJ100AT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 69K |
| 代理商： | BUJ100AT |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100AT
STATIC CHARACTERISTICS
T
sp
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CE
= V
(400V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 0.75 A; I
B
= 0.15mA
I
C
= 0.75 A; I
B
= 0.15mA
MIN.
-
-
TYP.
2.5
15
MAX.
100
500
UNIT
μ
A
μ
A
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
100
100
-
μ
A
μ
A
V
0.02
-
400
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
-
-
0.23
0.95
1.0
1.3
V
V
h
FE
h
FE
h
FE
DC current gain
I
C
= 10mA; V
CE
= 5 V
I
C
= 100mA; V
CE
= 5 V
I
C
= 0.75A; V
CE
= 5 V
11
12.5
9
20
21
14
27
31
20
DYNAMIC CHARACTERISTICS
T
sp
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 1.0 A; I
= -I
= 200mA;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.65
0.88
250
0.88
1.2
338
μ
s
μ
s
ns
I
= 1.0 A; I
Bon
= 200mA; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.51
50
0.7
70
μ
s
ns
I
= 1.0 A; I
Bon
= 200mA; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.4
130
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
September 1999
2
Rev 1.000
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