參數(shù)資料
型號: BUJ202AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 1/4頁
文件大?。?/td> 21K
代理商: BUJ202AX
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ202AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
88
MAX.
850
850
450
2
3
18
1.0
150
UNIT
V
V
V
A
A
W
V
ns
T
mb
25 C
I
= 0.2 A
Ic=1A,I
B1
=0.2A,I
B2
=0.2A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
850
450
850
2
3
0.75
1
18
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
25 C
THERMAL RESISTANCES
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Junction to mounting base
R
th j-a
Junction to ambient
CONDITIONS
TYP.
-
55
MAX.
7.2
-
UNIT
K/W
K/W
in free air
1 2 3
case
b
c
e
August 1998
1
Rev 1.000
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