參數(shù)資料
型號: BUJ202AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 2/4頁
文件大?。?/td> 21K
代理商: BUJ202AX
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ202AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 5 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 1 A; I
B
= 0.2 A
I
C
= 1 A; I
= 0.2 A
I
C
= 10 mA; V
CE
= 5 V
I
C
= 100 mA; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.2
1.5
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1
-
mA
V
450
V
CEsat
V
BEsat
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
-
-
1.0
1.1
35
35
V
V
10
14
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 1.0 A; I
= -I
= 0.2 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
-
-
0.5
3.5
1.4
μ
s
μ
s
μ
s
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
1.4
150
μ
s
ns
88
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.5
200
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
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