- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369553 > BU508DF (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | BU508DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | BU508DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
700
-
-
V
V
CEsat
V
BEsat
h
FE
V
F
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.6 A
Base-emitter saturation voltage
DC current gain
Diode forward voltage
-
-
6
-
-
-
1.0
1.1
30
2.0
V
V
I
C
= 4.5 A; I
= 2.0 A
I
C
= 100 mA; V
CE
= 5 V
I
F
= 4.5 A
13
1.6
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
f
T
Transition frequency at f = 5 MHz
C
C
Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
CONDITIONS
I
C
= 0.1 A;V
CE
= 5 V
V
CB
= 10 V
I
Csat
= 4.5 A;L
1 mH;C
= 4 nF
I
B(end)
= 1.4 A; L
B
= 6
μ
H; -V
BB
= -4 V;
-I
BM
= 2.25 A
TYP.
7
125
MAX.
-
-
UNIT
MHz
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
6.5
0.7
-
-
μ
s
μ
s
1
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU508DW | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU508DX | Silicon Diffused Power Transistor |
| BU522 | TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 7A I(C) | TO-220AB |
| BU522A | TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| BU536 | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 4A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU508DF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU508DF_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON DIFFUSED POWER TRANSISTOR |
| BU508DFI | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN General Purpose RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| BU508DR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。