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參數(shù)資料
| 型號(hào)： | BU508DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | BU508DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
1.6
0.7
MAX.
1500
700
8
15
34
1.0
-
2.0
-
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
= 4.5 A; I
B
= 1.6 A
f = 16kHz
I
F
= 4.5 A
I
Csat
= 4.5 A; f = 16kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
34
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1
2
3
case
b
c
e
July 1998
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU508DW | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU508DX | Silicon Diffused Power Transistor |
| BU522 | TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 7A I(C) | TO-220AB |
| BU522A | TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| BU536 | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 4A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU508DF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU508DF_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON DIFFUSED POWER TRANSISTOR |
| BU508DFI | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN General Purpose RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| BU508DR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218VAR |
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