參數(shù)資料
型號(hào): BTS650-P
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?6mOhm - Vbb(上)\u003d 5V的- 34V的-的TO220抗體/ 7?
文件頁(yè)數(shù): 8/16頁(yè)
文件大?。?/td> 236K
代理商: BTS650-P
Data Sheet BTS650P
Infineon Technologies AG
Page 8
2000-Mar-24
Input circuit (ESD protection)
IN
ZD
IN
I
Vbb
Rbb
V
Z,IN
VbIN
VIN
When the device is switched off (I
IN
=
0) the voltage
between IN and GND reaches almost V
bb
. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
V
Z,IN
=
66
V
(typ).
Short circuit detection
Fault Condition:
V
ON
> V
ON(SC)
(6
V typ.) and t> t
d(SC)
(80 ...350 μs).
Short circuit
detection
Logic
unit
+ Vbb
OUT
V
ON
Current sense status output
IS
IS
R
IS
I
ZD
IS
V
bb
V
bb
R
Z,IS
V
V
Z,IS
=
66
V
(typ.),
R
IS
=
1
k nominal (or 1
k /n, if n
devices are connected in parallel).
I
S
=
I
L
/
k
ilis
can be
driven only by the internal circuit as long as
V
out
-
V
IS
>
5 V. If you want measure load currents up to
I
L(M)
, R
IS
should be less than
V
bb
- 5 V
I
L(M)
/
K
ilis
.
Note: For large values of
R
IS
the voltage
V
IS
can reach
almost V
bb
. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
+ V
bb
OUT
PROFET
V
Z1
V
ON
D
S
IS
V
OUT
V
ZG
V
ON
is clamped to V
ON(Cl)
=
42
V typ. At inductive load
switch-off without D
S
, V
OUT
is clamped to V
OUT(CL)
=
-19
V typ. via V
ZG
. With D
S
, V
OUT
is clamped to V
bb
-
V
ON(CL)
via V
Z1
. Using D
S
gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
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