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參數(shù)資料
| 型號： | BTS650-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？6mOhm - Vbb（上）\u003d 5V的- 34V的-的TO220抗體/ 7？ |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 236K |
| 代理商： | BTS650-P |
Data Sheet BTS650P
Infineon Technologies AG
Page 2
2000-Mar-24
Pin
Symbol
Function
1
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3
)
2
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
3
IN
I
Input, activates the power switch in case of short to ground
4
Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
instead of this pin
4
)
.
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
5
IS
S
6
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
7
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
(overvoltage protection see page 4)
Supply voltage for short circuit protection,
T
j,start
=-40 ...+150°C:
(see diagram on page 10)
Load current (short circuit current, see page 5)
Load dump protection
V
LoadDump
=
V
A
+
V
s
,
V
A
=
13.5
V
R
I
IN,
IS
= open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150°C,
T
C
=
150°C const.,
I
L
=
20
A, Z
L
=
7.5
mH, 0
,
see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
Symbol
V
bb
V
bb
Values
Unit
42
34
V
V
I
L
self-limited
A
5
)
=
2
,
R
L
=
0.54
,
t
d
=
200
ms,
V
Load dump
6
)
75
V
T
j
T
stg
P
tot
-40 ...+150
-55 ...+150
°C
170
W
E
AS
1.5
J
V
ESD
4
kV
I
IN
I
IS
+15
, -250
+15
, -250
mA
3
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4
)
Otherwise add up to 0.7 m (depending on used length of the pin) to the R
ON
if the pin is used instead of
the tab.
5
)
R
I
= internal resistance of the load dump test pulse generator.
6
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS650P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS650P | 制造商:Infineon Technologies AG 功能描述:IC MOSFET SMART SWITCH TO-220-7 |
| BTS650PE3128 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| BTS650PE3180 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| BTS650PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時(shí)間（最大值）:13 ns 關(guān)閉時(shí)間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
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