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參數(shù)資料
| 型號(hào)： | BTS650-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？6mOhm - Vbb（上）\u003d 5V的- 34V的-的TO220抗體/ 7？ |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 236K |
| 代理商： | BTS650-P |
Data Sheet BTS650P
Infineon Technologies AG
Page 10
2000-Mar-24
Inverse load current operation
PROFET
V
IN
OUT
IS
bb
V
bb
V
OUT
- I
L
R
IS
V
IS
V
IN
+
-
+
-
I
IS
The device is specified for inverse load current
operation (
V
OUT
>
V
bb
> 0V
). The current sense feature
is not available during this kind of operation (
I
IS
= 0).
With
I
IN
= 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (V
IN
= 0), this power dissipation is decreased to the
much lower value
R
ON(INV)
*
I
2
(specifications see page
4).
Note:
Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
E
bb
PROFET
V
IN
OUT
IS
bb
E
E
EAS
L
R
ELoad
L
R
L
{
Z
L
R
IS
I
IN
V
bb
i (t)
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL 0
:
E
AS
= I
L
·
L
2
·
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150°C, Vbb =
12
V, RL =
0
L [μH]
IL [A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by I
S
*R
IS
. After a delay time defined by
R
V
*C
V
T1 will be reset. The device is turned on again,
the short circuit current is defined by I
L(SC)
and the
device is shut down after t
d(SC)
with latch function.
PROFET
IS
IN
IS
R
V
R
Power
GND
Signal
GND
Vbb
OUT
V
C
load
R
T1
T2
IN
Signal
Vbb
1
10
100
1000
10000
100000
1000000
1 A
10 A
100 A
1000 A
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| BTS650PE3128 | Transient Voltage Suppressor Diodes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS650P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS650P | 制造商:Infineon Technologies AG 功能描述:IC MOSFET SMART SWITCH TO-220-7 |
| BTS650PE3128 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| BTS650PE3180 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| BTS650PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時(shí)間（最大值）:13 ns 關(guān)閉時(shí)間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
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