- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369534 > BTS650-P Transient Voltage Suppressor Diodes PDF資料下載
參數(shù)資料
| 型號(hào)： | BTS650-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？6mOhm - Vbb（上）\u003d 5V的- 34V的-的TO220抗體/ 7？ |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | BTS650-P |
第1頁(yè)第2頁(yè)當(dāng)前第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
Data Sheet BTS650P
Infineon Technologies AG
Page 3
2000-Mar-24
Thermal Characteristics
Parameter and Conditions
Symbol
Values
typ
Unit
min
max
0.75
Thermal resistance
chip - case
:
R
thJC
R
thJA
7
)
--
--
--
K/W
junction - ambient (free air):
SMD version, device on PCB
8)
:
60
33
--
Electrical Characteristics
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,2,6,7, see
measurement circuit page 7)
V
IN
=
0,
I
L
=
20
A
,
T
j
=
150
°C:
I
L
=
20
A,
T
j
=
25
°C:
R
--
4.4
7.9
6.0
10.5
10.7
17
m
I
L
=
90
A
,
T
j
=
150
°C:
--
V
bb
=
6V
9
)
,
I
L
=
20
A
,
T
j
=
150
°C:
R
ON(Static)
I
L(ISO)
--
10
70
Nominal load current
10
)
(Tab to pins 1,2,6,7)
ISO 10483-1/6.7:
V
ON
=
0.5
V,
T
c =
85
°C
11
)
Nominal load current
10)
, device on PCB
8))
T
A
= 85 °C,
T
j
150 °C
V
ON
0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
see diagram on page 13
Turn-on time
12
)
Turn-off time
R
L
=
1
,
T
j
=-40...+150°C
Slew rate on
12)
(10 to 30%
V
OUT
)
R
L
=
1
,
T
J
= 25 °C
Slew rate off
12)
(70 to 40%
V
OUT
)
R
L
=
1
,
T
J
= 25 °C
55
--
A
I
L(NOM)
13.6
17
--
A
V
ON
=
1.8
V,
T
c =
25
°C:
V
ON
=
1.8
V,
T
c =
150
°C:
IIN
to 90%
V
OUT
:
IIN
to 10%
V
OUT
:
I
L(Max)
250
150
100
30
--
--
--
--
--
--
A
s
t
on
t
off
420
110
d
V
/dt
on
--
0.7
--
V/ s
-d
V
/dt
off
--
1.1
--
V/ s
7
)
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70 m thick) copper area for Vbb
connection. PCB is vertical without blown air.
9
)
Decrease of V
bb
below 10 V causes slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
10
)
Not tested, specified by design.
11
)
T
is about 105°C under these conditions.
12
)See timing diagram on page 14.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTS650PE3128 | Transient Voltage Suppressor Diodes |
| BTS650PE3180 | Transient Voltage Suppressor Diodes |
| BTS650PE3180A | Transient Voltage Suppressor Diodes |
| BTS650PE3230 | Transient Voltage Suppressor Diodes |
| BTS6510B | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS650P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS650P | 制造商:Infineon Technologies AG 功能描述:IC MOSFET SMART SWITCH TO-220-7 |
| BTS650PE3128 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| BTS650PE3180 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| BTS650PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時(shí)間（最大值）:13 ns 關(guān)閉時(shí)間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。