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參數(shù)資料
| 型號(hào)： | BSS110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 170 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | BSS110 |
1995 Apr 07
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
±
20
170
520
830
+150
150
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
65
V
V
mA
mA
mW
°
C
°
C
open drain
up to T
amb
= 25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
0.8
50
TYP.
25
15
3.5
MAX.
2
100
10
60
±
10
10
45
25
12
UNIT
V
(BR)DSS
V
GSth
I
DSS
drain-source breakdown voltage V
GS
= 0; I
D
=
10
μ
A
gate-source threshold voltage
drain-source leakage current
V
V
nA
μ
A
μ
A
nA
mS
pF
pF
pF
V
DS
= V
GS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
40 V
V
GS
= 0; V
DS
=
50 V
V
GS
= 0; V
DS
=
50 V; T
j
= 125
°
C
V
DS
= 0; V
GS
=
±
20 V
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
gate leakage current
drain-source on-state resistance V
GS
=
10 V; I
D
=
170 mA
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
V
DS
=
25 V; I
D
=
170 mA
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
Switching times
(see Figs 2 and 3)
t
on
turn-on time
V
GS
= 0 to
10 V; V
DD
=
40 V;
I
D
=
200 mA
V
GS
=
10 to 0 V; V
DD
=
40 V;
I
D
=
200 mA
3
ns
t
off
turn-off time
7
ns
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