參數(shù)資料
型號(hào): BSS131Q62702-S565
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 晶體管SOT23封裝貼片MOSFET的
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 54K
代理商: BSS131Q62702-S565
May 1995
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
BSS138
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 20K
)
Gate-Source Voltage - Continuous
50
V
V
GSS
± 20
V
- Non Repetitive (T
P
< 50 μS)
Drain Current - Continuous
± 40
I
D
0.22
A
- Pulsed
0.88
P
D
Maximum Power Dissipation
0.36
W
Derate Above 25
°
C
2.8
mW/°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-55 to 150
°C
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction to Ambient
350
°C/W
BSS138 Rev. A1
0.22 A, 50V. R
DS(ON)
= 3.5
@ V
GS
= 10V.
High density cell design for extremely low R
DS(ON)
.
Rugged and Relaible
Compact industry standard SOT-23 surface mount
package.
D
S
G
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance. These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
1997 Fairchild Semiconductor Corporation
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